3600V 1700V
Brief introduction
IGBT module,High current igbt module, single switch IGBT modules produced by CRRC. 1700V 3600A.
Features
●SPT+chip-set for low switching losses
●Low VCEsat
●Low drivering power
●AlSiC base plate for high power cycling capability
●AlN substrate for low thermal resistance
Typical application
●Traction drives
●DC chopper
●Medium voltage inverters/converters
Maximum rated values
Parameter | Symbol | Conditions | min | max | Unit |
Collector-emitter voltage | VCES | VGE =0V,Tvj ≥25°C |
| 1700 | V |
DC collector current | IC | TC =80°C |
| 3600 | A |
Peak collector current | ICM | tp=1ms,Tc=80°C |
| 7200 | A |
Gate-emitter voltage | VGES |
| -20 | 20 | V |
Total power dissipation | Ptot | TC =25°C,perswitch(IGBT) |
| 17800 | W |
DC forward current | IF |
|
| 3600 | A |
Peak forward current | IFRM | tp=1ms |
| 7200 | A |
Surge current | IFSM | VR =0V,Tvj =125°C,tp=10ms, half-sine wave |
| 18000 | A |
IGBT short circuit SOA IGBT |
tpsc |
VCC =1200V,VCEMCHIP≤1700V VGE ≤15V,Tvj≤125°C |
|
10 |
μs |
Isolation voltage | Visol | 1min,f=50Hz |
| 4000 | V |
Junction temperature | Tvj |
|
| 175 | ℃ |
Junction operating temperature | Tvj(op) |
| -50 | 150 | ℃ |
Case temperature | TC |
| -50 | 125 | ℃ |
Storage temperature | Tstg |
| -50 | 125 | ℃ |
Mounting torques | MS |
| 4 | 6 |
Nm |
MT1 |
| 8 | 10 | ||
MT2 |
| 2 | 3 |
IGBT characteristic values
Parameter | Symbol | Conditions | Min | type | max | Unit | |
Collector (- emitter) breakdown voltage | V(BR)CES | VGE =0V,IC=10mA, Tvj=25°C | 1700 |
|
| V | |
Collector-emitter saturation voltage |
VCEsat | IC =3600A, VGE =15V | Tvj= 25°C |
| 2.5 |
| V |
Tvj=125°C |
| 3.0 |
| V | |||
Tvj=150°C |
| 3.1 |
| V | |||
Collector cut off current |
ICES | VCE =1700V, VGE =0V | Tvj= 25°C |
|
| 10 | mA |
Tvj=125°C |
|
| 100 | mA | |||
Tvj=150°C |
| 170 |
| mA | |||
Gate leakage current | IGES | VCE =0V,VGE =20V, Tvj =125°C | -500 |
| 500 | nA | |
Gate-emitter threshold voltage | VGE(TH) | IC =240mA,VCE =VGE, Tvj =25°C | 5.3 |
| 7.3 | V | |
Gate charge | Qg | IC =2400A,VCE =900V, VGE =-15V … 15V |
| 21.0 |
| µC | |
Input capacitance | Cies |
VCE =25V,VGE =0V, f=1MHz,Tvj =25°C |
| 239 |
|
nF | |
Output capacitance | Coes |
| 20.9 |
| |||
Reverse transfer capacitance | Cres |
| 9.24 |
| |||
Turn-on delay time |
td(on) |
VCC =900V, IC =3600A, RG =2.2Ω , VGE =±15V, Lσ=280nH, | Tvj = 25 °C |
| 1200 |
|
ns |
Tvj = 125 °C |
| 1500 |
| ||||
Tvj = 150 °C |
| 1600 |
| ||||
Rise time |
tr | Tvj = 25 °C |
| 1400 |
| ||
Tvj = 125 °C |
| 1600 |
| ||||
Tvj = 150 °C |
| 1700 |
| ||||
Turn-off delay time |
td(off) | Tvj = 25 °C |
| 3000 |
|
ns | |
Tvj = 125 °C |
| 3500 |
| ||||
Tvj = 150 °C |
| 3700 |
| ||||
Fall time |
tf | Tvj = 25 °C |
| 500 |
| ||
Tvj = 125 °C |
| 560 |
| ||||
Tvj = 150 °C |
| 620 |
| ||||
Turn-on switching loss energy |
Eon | Tvj = 25 °C |
| 2700 |
|
mJ | |
Tvj = 125 °C |
| 2900 |
| ||||
Tvj = 150 °C |
| 3200 |
| ||||
Turn-off switching loss energy |
Eoff | Tvj = 25 °C |
| 3800 |
|
mJ | |
Tvj = 125 °C |
| 4100 |
| ||||
Tvj = 150 °C |
| 4400 |
| ||||
Short circuit current | ISC | tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 1200V |
| 10000 |
| A | |
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