T65ZPR,Rectifier Diode

I_T(AV)

4380A

V_RRM

5200V 5600V

6000V 6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180。half sine wave 50Hz Double side cooled,

TC= 100℃

150

1510

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

5600

6500

V

IRRM

Repetitive peak current

At VRRM

150

150

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

26

kA

I2t

I2t for fusing coordination

3380

A²s* 10³

VFO

Threshold voltage

150

0.92

V

rF

Forward slope resistance

0.39

mΩ

VFM

Peak forward voltage

IFM=3000A, F=34kN

25

1.85

V

Qrr

Recovery charge

IFM= 1000A, tp=4000μs, di/dt=-20A/μs, VR= 100V

150

5000

μC

Rth(j-c)

Thermal resistance Junction to case

At 180° sine, double side cooled Clamping force 34kN

0.014

℃/W

Rth(c-h)

Thermal resistance case to heatsink

0.0035

Fm

Mounting force

27

34

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

820/ 1100

g

Outline

ZT60cT / ZT60dT