Y50KFG,Non Symmetric Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Double side cooled,

TC=55℃

125

1200

A

TC=70℃

125

1000

A

VDRM

Repetitive peak off-state voltage

tp=10ms

125

2000

3000

V

VRRM

Repetitive peak reverse voltage

1000

2500

IDRM/IRRM

Repetitive peak current

at VDRM/VRRM

125

80

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

16

kA

I2t

I2t for fusing coordination

1280

103A2s

VTO

Threshold voltage

125

1.55

V

rT

On-state slope resistance

0.40

mΩ

VTM

Peak on-state voltage

ITM=3000A, F=24kN

20≤tq≤35

25

2.80

V

36≤tq≤60

2.60

V

61≤tq≤75

2.40

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current (Non-repetitive)

VDM= 67%VDRM to 1600A,

Gate pulse tr ≤0.5μs    IGM=1.5A

125

1500

A/μs

Qrr

Recovery charge

ITM=1000A ,tp=4000µs, di/dt=-20A/µs, VR=100V

125

750

µC

tq

Circuit commutated turn-off time

ITM=1000A ,tp=4000µs, VR=100V dv/dt=30V/µs ,di/dt=-20A/µs

100

20

75

µs

IGT

Gate trigger current

VA=12V, IA=1A

25

40

300

mA

VGT

Gate trigger voltage

0.9

3.0

V

IH

Holding current

20

500

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

double side cooled     Clamping force 24kN

0.020

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.005

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

440

g

Outline

KT50cT