MD600-A,Diode Modules

VRSM

VRRM

Type & Outline

900V

800V

MDx600-08-417F2

1100V

1000V

MDx600-10-417F2

1300V

1200V

MDx600-12-417F2

1500V

1400V

MDx600-14-417F2

1700V

1600V

MDx600-16-417F2

1900V

1800V

MDx600-18-417F2

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180° half sine wave 50Hz Single side cooled, TC=100℃

150

600

A

IF (RMS)

RMS forward current

150

942

A

IRRM

Repetitive peak current

at VRRM

150

30

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

19.0

kA

I²t

I²t for fusing coordination

1805

A²s*10³

VFO

Threshold voltage

150

0.75

V

rF

Forward slope resistance

0.35

mΩ

VFM

Peak forward voltage

IFM=1500A

25

1.35

V

Rth(j-c)

Thermal resistance Junction to case

At 180°sine^, Single side cooled per chip

0.065

℃/W

Rth(c-h)

Thermal resistance case to heatsink

At 180° sine^, Single side cooled per chip

0.024

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t=1min,Iiso:1mA(max)

3000

V

Fm

Terminal connection torque(M10)

12.0

N·m

Mounting torque(M6)

6.0

N·m

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

775

g

Outline

417F2