IGBT Module 1700V

YMIBD800-17,IGBT Module,Dual Switch IGBT,CRRC

YMIBD800-17,IGBT Module,Dual Switch IGBT,CRRC

1700V 800A

Brand:

CRRC

Spu:

YMIBD800-17 / TIM800DDM17-PSA011

Introduction
Outline

Introduction

Brief introduction

IGBT module,single switch IGBT modules produced by CRRC. 1700V 1200A.

Key Parameters

VCES	1700		V
VCE(sat)	(typ)	2.30	V
IC	(max)	800	A
IC(RM)	(max)	1600	A

Typical Applications

Traction drives
Motor Controllers
Wind Power
High Reliability Inverter

Features

AlSiC Base
AIN Substrates
High Thermal Cycling Capability
10μs Short Circuit Withstand
Low Vce(sat) device
High current density

Absolute Maximum Rating

(Symbol)	(Parameter)	(Test Conditions)	(value)	(Unit)
VCES	Collector-emitter voltage	V GE = 0V, TC= 25 。C	1700	V
V GES	Gate-emitter voltage	TC= 25 。C	± 20	V
I C	Collector-emitter current	TC = 80 。C	800	A
I C(PK)	Peak collector current	t P=1ms	1600	A
P max	Max. transistor power dissipation	Tvj = 150。C, TC = 25 。C	6.94	kW
I 2t	Diode I 2t	VR =0V, t P = 10ms, Tvj = 125 。C	120	kA2s
Visol	Isolation voltage – per module	( Commoned terminals to base plate), AC RMS,1 min, 50Hz,TC= 25 。C	4000	V
Q PD	Partial discharge – per module	IEC1287. V 1 = 1800V, V2 = 1300V, 50Hz RMS, TC= 25 。C	10	pC

Electrical Characristics

(Symbol)	(Parameter)	(Test Conditions)	(Min)	(Typ)	(Max)	(Unit)
I CES	Collector cut-off current	V GE = 0V,VCE = VCES			1	mA
I CES	Collector cut-off current	V GE = 0V, VCE = VCES , TC=125 ° C			25	mA
I GES	Gate leakage current	V GE = ±20V, VCE = 0V			4	μA
V GE (TH)	Gate threshold voltage	I C = 40mA, V GE = VCE	5.00	5.70	6.50	V
VCE (sat)(*1)	Collector-emitter saturation voltage	V GE =15V, I C = 800A		2.30	2.60	V
VCE (sat)(*1)	Collector-emitter saturation voltage	V GE =15V, I C = 800A,Tvj = 125 ° C		2.80	3.10	V
I F	Diode forward current	直流 DC			800	A
I FRM	Diode maximum forward current	t P = 1ms			1600	A
VF(*1)	Diode forward voltage	I F = 800A		1.70	2.00	V
VF(*1)	Diode forward voltage	I F = 800A, Tvj = 125 ° C		1.80	2.10	V
C ies	Input capacitance	VCE = 25V, V GE = 0V, f = 1MHz		60		nF
Q g	Gate charge	±15V		9		μC
C res	Reverse transfer capacitance	VCE = 25V, V GE = 0V, f = 1MHz		-		nF
L M	Module inductance			20		nH
R INT	Internal transistor resistance			270		μΩ
I SC	Short circuit current, ISC	Tvj = 125° C, VCC = 1000V, V GE ≤15V, tp ≤10μs, VCE(max) = VCES – L (*2)×di/dt, IEC 6074-9		3700		A
td(off)	Turn-off delay time	I C =800A VCE =900V L ~ 100nH V GE = ±15V RG(ON) = 2.2Ω RG(OFF)= 2.2Ω		890		ns
t f	Fall time			220		ns
E OFF	Turn-off energy loss			220		mJ
td(on)	Turn-on delay time			320		ns
t r	Rise time			190		ns
EON	Turn-on energy loss			160		mJ
Q rr	Diode reverse recovery charge	I F = 800A VCE = 900V diF/dt =4000A/us		260		μC
I rr	Diode reverse recovery current			510		A
E rec	Diode reverse recovery energy			180		mJ
td(off)	Turn-off delay time	I C =800A VCE =900V L ~ 100nH V GE = ±15V RG(ON) = 2.2Ω RG(OFF)= 2.2Ω		980		ns
t f	Fall time			280		ns
E OFF	Turn-off energy loss			290		mJ
td(on)	Turn-on delay time			400		ns
t r	Rise time			250		ns
EON	Turn-on energy loss			230		mJ
Q rr	Diode reverse recovery charge	I F = 800A VCE = 900V diF/dt =4000A/us		420		μC
I rr	Diode reverse recovery current			580		A
E rec	Diode reverse recovery energy			280		mJ