YMIBD500-33,IGBT Module,Double Switch IGBT,CRRC

(Symbol)

(Parameter)

(Test Conditions)

(value)

(Unit)

VCES

Collector-emitter voltage

V GE = 0V,Tvj = 25°C

3300

V

V GES

Gate-emitter voltage

± 20

V

I C

Collector-emitter current

T case = 100 °C, Tvj = 150 °C

500

A

I C(PK)

Peak collector current

1ms, T case = 140 °C

1000

A

P max

Max. transistor power dissipation

Tvj = 150°C, T case = 25 °C

5.2

kW

I 2t

Diode I t

VR =0V, t P = 10ms, Tvj = 150 °C

80

kA2s

Visol

Isolation voltage – per module

Commoned terminals to base plate),

AC RMS,1 min, 50Hz

6000

V

Q PD

Partial discharge – per module

IEC1287. V 1 = 3500V, V2 = 2600V, 50Hz RMS, TC = 25 °C

10

pC

Tcase = 25 °C T case = 25°C unless stated otherwise

(Symbol)

(Parameter)

(Test Conditions)

(Min)

(Typ)

(Max)

(Unit)

I CES

Collector cut-off current

V GE = 0V, VCE = VCES

1

mA

V GE = 0V, VCE = VCES , T case =125 °C

30

mA

V GE = 0V, VCE = VCES , T case =150 °C

50

mA

I GES

Gate leakage current

V GE = ±20V, VCE = 0V

1

μA

V GE (TH)

Gate threshold voltage

I C = 40mA, V GE = VCE

5.50

6.10

7.00

V

VCE (sat)(*1)

Collector-emitter saturation voltage

V GE =15V, I C = 500A

2.40

2.90

V

V GE =15V, I C = 500A,Tvj = 125 °C

2.95

3.40

V

V GE =15V, I C = 500A,Tvj = 150 °C

3.10

3.60

V

I F

Diode forward current

DC

500

A

I FRM

Diode maximum forward current

t P = 1ms

1000

A

VF(*1)

Diode forward voltage

I F = 500A

2.10

2.60

V

I F = 500A, Tvj = 125 °C

2.25

2.70

V

I F = 500A, Tvj = 150 °C

2.25

2.70

V

Cies

Input capacitance

VCE = 25V, V GE = 0V, f = 1MHz

90

nF

Qg

Gate charge

±15V

9

μC

Cres

Reverse transfer capacitance

VCE = 25V, V GE = 0V, f = 1MHz

2

nF

L M

Module inductance

25

nH

R INT

Internal transistor resistance

310

μΩ

I SC

Short circuit current, ISC

Tvj = 150°C, V CC = 2500V, V GE ≤15V, tp ≤10μs,

VCE(max) = VCES – L (*2) ×di/dt, IEC 6074-9

1800

A

td(off)

Turn-off delay time

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH

V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1720

ns

t f

Fall time

520

ns

E OFF

Turn-off energy loss

780

mJ

td(on)

Turn-on delay time

650

ns

tr

Rise time

260

ns

EON

Turn-on energy loss

730

mJ

Qrr

Diode reverse recovery charge

I F =500A

VCE =1800V

diF/dt =2100A/us

390

μC

I rr

Diode reverse recovery current

420

A

Erec

Diode reverse recovery energy

480

mJ

(Symbol)

(Parameter)

(Test Conditions)

(Min)

(Typ)

(Max)

(Unit)

td(off)

Turn-off delay time

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1860

ns

t f

Fall time

550

ns

E OFF

Turn-off energy loss

900

mJ

td(on)

Turn-on delay time

630

ns

tr

上升时间 Rise time

280

ns

EON

Turn-on energy loss

880

mJ

Qrr

Diode reverse recovery charge

I F =500A

VCE =1800V

diF/dt =2100A/us

620

μC

I rr

Diode reverse recovery current

460

A

Erec

Diode reverse recovery energy

760

mJ

(Symbol)

(Parameter)

(Test Conditions)

(Min)

(Typ)

(Max)

(Unit)

td(off)

Turn-off delay time

I C =500A VCE =1800V Cge = 100nF

L ~ 150nH V GE = ±15V RG(ON) = 3.0Ω RG(OFF)= 4.5Ω

1920

ns

t f

Fall time

560

ns

E OFF

Turn-off energy loss

1020

mJ

td(on)

Turn-on delay time

620

ns

tr

Rise time

280

ns

EON

Turn-on energy loss

930

mJ

Qrr

Diode reverse recovery charge

I F =500A

VCE =1800V

diF/dt =2100A/us

720

μC

I rr

Diode reverse recovery current

490

A

Erec

Diode reverse recovery energy

900

mJ