Y89ZKG,Fast Recovery Diode

I_T(AV)

2600A

V_RRM

4000V 4200V

4500V 5000V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=70℃

125

2600

A

VRRM

Repetitive peak reverse voltage

tp=10ms

125

4000

5000

V

IRRM

Repetitive peak current

at VRRM

125

120

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

125

40

kA

I2t

I2t for fusing coordination

8000

A2s* 103

VFO

Threshold voltage

125

1.10

V

rF

Forward slope resistance

0.47

mΩ

VFM

Peak on-state voltage

IFM=5000A, F=70kN

125

2.60

V

Irm

Reverse recovery current

IFM=2000A, tp=2000µs, di/dt=-60A/µs, VR=50V

125

450

A

trr

Reverse recovery time

15

µs

Qrr

Recovery charge

4300

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 70kN

0.005

℃/W

Rth(c-h)

Thermal resistance case to heatsink

0.0015

Fm

Mounting force

63

84

kN

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1390

g

Outline

ZT84cT