Y89ZKD,Fast Recovery Diode

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85℃

150

4000

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

2100

3000

V

IRRM

Repetitive peak current

at V_RRM

150

300

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6V_RRM

150

44

kA

I2t

I2t for fusing coordination

9680

A²s*10³

VFO

Threshold voltage

150

0.96

V

rF

Forward slope resistance

0.12

mΩ

VFM

Peak forward voltage

IFM=5000A, F=35kN

25

2.20

V

Irm

Reverse recovery current

IFM=2000A, tp=4000μs, di/dt=-60A/μs, VR= 100V

150

350

A

trr

Reverse recovery time

12

μs

Qrr

Recovery charge

4300

μC

Rth(j-c)

Thermal resistance Junction to case

Double side cooled    Clamping force 40kN

0.007

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.002

Fm

Mounting force

63

84

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

1390

g

Outline

ZT84cT