Y80KFG,Non Symmetric Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Double side cooled

TC=55℃

125

3354

A

VDRM

Repetitive peak off-state voltage

tp=10ms

125

2000

3000

V

VRRM

Repetitive peak reverse voltage

1000

2500

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

250

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

40

kA

I2t

I2t for fusing coordination

8000

103A2s

VTO

Threshold voltage

125

1.30

V

rT

On-state slope resistance

0.14

mΩ

VTM

Peak on-state voltage

ITM=5000A, F=70kN

45μs≤tq≤75µs

25

2.00

V

76μs≤tq≤100µs

1.80

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current (Non-repetitive)

VDM= 67%VDRM,

Gate pulse tr ≤0.5μs IGM=1.5A

125

1500

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000µs, di/dt=-20A/µs, VR=100V

125

1000

µC

tq

Circuit commutated turn-off time

ITM=2000A, tp=4000µs, VR=100V dv/dt=30V/µs, di/dt=-20A/µs

125

45

100

µs

IGT

Gate trigger current

VA=12V, IA=1A

25

40

250

mA

VGT

Gate trigger voltage

0.9

2.5

V

IH

Holding current

20

1000

mA

IL

Latching current

1500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 180。sine, double side cooled Clamping force 70kN

0.0085

。C /W

Rth(c-h)

Thermal resistance case to heatsink

0.0020

Fm

Mounting force

63

84

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

1230

g

Outline

KT75cT