Y76ZKG, Fast Recovery Diode

I_T(AV)

2175A

V_RRM

4000V   4200V

4500V   5000V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85℃

150

2175

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

4000

5000

V

IRRM

Repetitive peak current

at V_RRM

150

240

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6V_RRM

150

30

kA

I2t

I2t for fusing coordination

4500

A²s* 10³

VFO

Threshold voltage

150

1.65

V

rF

Forward slope resistance

0.25

mΩ

VFM

Peak forward voltage

I_TM=3000A, F=40kN

25

3.00

V

Irm

Reverse recovery current

ITM=2000A, tp=4000μs, di/dt=-60A/μs, VR= 100V

150

320

A

trr

Reverse recovery time

12

μs

Qrr

Recovery charge

1900

2200

μC

Rth(j-c)

Thermal resistance Junction to case

At 180° sine, double side cooled Clamping force40kN

0.010

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.003

Fm

Mounting force

35

47

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

1100

g

Outline

ZT73cT