Y76ZKD,Fast Recovery Diode

I_T(AV)

2570A

V_RRM

2200V   2500V

2800V   3000V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85℃

150

2570

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

2100

3000

V

IRRM

Repetitive peak current

at VRRM

150

200

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

23

kA

I2t

I2t for fusing coordination

2645

A2s*103

VFO

Threshold voltage

150

1.20

V

rF

Forward slope resistance

0.21

mΩ

VFM

Peak forward voltage

IFM=3000A, F=35kN

150

1.90

V

Irm

Reverse recovery current

IFM=2000A, tp=4000µs, di/dt=-60A/µs, VR=100V

150

300

A

trr

Reverse recovery time

5

µs

Qrr

Recovery charge

750

µC

Rth(j-c)

Thermal resistance Junction to case

Double side cooled Clamping force 40kN

0.010

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.003

Fm

Mounting force

35

47

kN

Tvj

Junction temperature

-40

150

。C

Tstg

Stored temperature

-40

160

℃

Wt

Weight

1100

g

Outline

ZT73cT