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High Frequency Thyristor

High Frequency Thyristor

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Y76KAD(D) ,High Frequency Thyristor

Part No. Y76KAD(D)-KT73cT

Brand:
TECHSEM
Spu:
Y76KAD(D)-KT73cT
Appurtenance:

Product Brochure:DOWNLOAD

  • Introduction
  • Outline
Introduction

IT(AV)

2600A

VDRM VRRM

1200V

1400V

tq

10~25µs

Features

  • Interdigitated amplifying gates
  • Fast turn-on and high di/dt
  • Low switching losses
  • Short turn-off time
  • Hermetic metal cases with ceramic insulators

Typical Applications

  • Inductive heating
  • Electronic welders
  • Self-commutated inverters
  • AC motor speed control

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(C)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180half sine wave 50Hz Double side cooled

TC=55C

125

2600

A

TC=70C

125

2200

A

IDRM IRRM

Repetitive peak current

at VDRM tp= 10ms at VRRM tp= 10ms

125

300

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

35

kA

I2t

I2t for fusing coordination

6125

103A2s

VTO

Threshold voltage

125

1.38

V

rT

On-state slope resistance

0.20

VTM

Peak on-state voltage

ITM=4000A, F=40kN

25

2.50

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDR

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

VDM=67%VDRM,

Gate pulse tr ≤0.5μs IGM= 1.5A

125

1500

A/μs

Qrr

Recovery charge

ITM=2000A, tp=4000µs, di/dt=-20A/µs,VR=50V

125

60

µC

tq

Circuit commutated turn-off time

ITM=2000A,tp=4000µs, VR=50V dv/dt=30V/µs ,di/dt=-20A/µs

125

10

25

µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

40

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

20

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

Double side cooled Clamping force 40kN

0.010

C /W

Rth(c-h)

Thermal resistance case to heatsink

0.003

Fm

Mounting force

35

47

kN

Tvj

Junction temperature

-40

125

C

Tstg

Stored temperature

-40

140

C

Wt

Weight

1100

g

Outline

KT73cT

Outline

Y76KAD(D)-2(1).png

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