Y70ZKD,Fast Recovery Diode

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180。half sine wave 50Hz Double side cooled,

TC=85℃

150

1876

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

2100

3000

V

IRRM

Repetitive peak current

at VRRM

150

195

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

25

kA

I2t

I2t for fusing coordination

3125

A²s*10³

VFO

Threshold voltage

150

1.55

V

rF

Forward slope resistance

0.29

mΩ

VFM

Peak forward voltage

ITM=3000A, F=35kN

25

3.20

V

Irm

Reverse recovery current

ITM=2000A, tp=4000μs, di/dt=-60A/μs, VR= 100V

150

260

A

trr

Reverse recovery time

10

μs

Qrr

Recovery charge

1300

1500

μC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force35kN

0.012

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.003

Fm

Mounting force

30

40

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

880

g

Outline

ZT60cT