Y60ZKD,Fast Recovery Diode

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85。C

150

1508

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

2100

3000

V

IRRM

Repetitive peak current

at VRRM

150

145

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

20

kA

I2t

I2t for fusing coordination

2000

A2s*103

VFO

Threshold voltage

150

1.58

V

rF

Forward slope resistance

0.30

mΩ

VFM

Peak forward voltage

ITM=2000A, F=28kN

25

2.80

V

Irm

Reverse recovery current

ITM=1000A, tp=4000µs, di/dt=-60A/µs, VR=100V

150

200

A

trr

Reverse recovery time

8

µs

Qrr

Recovery charge

800

1010

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 28kN

0.016

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.004

Fm

Mounting force

21

30

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

640

g

Outline

ZT54cT