Y60KFE,Non Symmetric Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled

T_C=55℃

125

1600

A

VDRM

Repetitive peak off-state voltage

tp=10ms

125

1200

2000

V

VRRM

Repetitive peak reverse voltage

1000

1800

V

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

120

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

18

kA

I2t

I2t for fusing coordination

1620

103A2s

VTO

Threshold voltage

125

1.27

V

rT

On-state slope resistance

0.22

mΩ

VTM

Peak on-state voltage

ITM=3000A, F=28kN

20≤tq≤28

25

2.20

V

29≤tq≤50

2.00

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current (Non-repetitive)

VDM= 67%VDRM,

Gate pulse tr ≤0.5μs   IGM= 1.5A

125

1500

A/μs

Qrr

Recovery charge

ITM= 1000A, tp=4000μs, di/dt=-20A/μs, VR= 100V

125

750

μC

tq

Circuit commutated turn-off time

ITM= 1000A ,tp=4000μs, VR= 100V dv/dt=30V/μs ,di/dt=-20A/μs

125

15

50

μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

40

250

mA

VGT

Gate trigger voltage

0.9

2.5

V

IH

Holding current

20

500

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 32kN

0.016

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

0.004

Fm

Mounting force

27

34

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

640

g

Outline

KT54cT