Y55KAD,High Frequency Thyristor

IT(AV)  

1520A

VDRM,VRRM      

1200V    1400V

tq

12~28µs

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(。C)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Double side cooled,

TC=55。C

125

1520

A

VDRM VRRM

Repetitive peak off-state voltage Repetitive peak reverse voltage

tp=10ms

125

1100

1400

V

IDRM IRRM

Repetitive peak off-state current Repetitive peak reverse current

at VDRM at VRRM

125

100

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

18

kA

I2t

I2t for fusing coordination

1620

A2s*103

VTO

Threshold voltage

125

1.63

V

rT

On-state slope resistance

0.25

mΩ

VTM

Peak on-state voltage

ITM=3000A, F=26kN

25

3.20

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 2500A

Gate pulse tr ≤0.5μs IGM= 1.5A

125

1500

A/μs

Qrr

Recovery charge

ITM= 1000A, tp=4000μs,  di/dt=-20A/μs, VR= 100V

125

105

120

μC

tq

Circuit commutated turn-off time

ITM= 1000A, tp=4000μs, VR= 100V dv/dt=30V/μs, di/dt=-20A/μs

125

12

28

μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

20

400

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine, double side cooled Clamping force 26kN

0.018

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.004

Fm

Mounting force

21

30

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

590

g

Outline

KT54cT