Y50ZYD,Soft Recovery Diode

I_T(AV)

1500A

V_RRM

1800V 2000V

2200V 2500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

Tsink=55℃

125

1500

A

IRRM

Repetitive peak current

at VRRM

125

85

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

125

19.6

kA

I2t

I2t for fusing coordination

1920.8

A2s*103

VFO

Threshold voltage

125

1.16

V

rF

Forward slope resistance

0.29

mΩ

VFM

Peak forward voltage

@IFM=1500A,

F=24kN

25

1.76

V

@IFM=3000A,

125

2.03

VFRM

Maximum forward recovery voltage

di/dt=1000A/µs

125

45

V

25

28

V

Irm

Reverse recovery current

IFM=1000A,tp=4000µs, -di/dt=60A/µs, VR=50V

125

144

A

trr

Reverse recovery time

4.5

µs

Qrr

Recovery charge

650

µC

Rth(j-c)

Thermal resistance Junction to case

At 180。sine, double side cooled Clamping force 24kN

0.021

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.005

Fm

Mounting force

19

26

kN

Tjop

Operating temperature range

-40

125

℃

Tstg

Stored temperature

-40

150

℃

Wt

Weight

440

g

Outline

ZT50cT