Y50ZYB,Soft Recovery Diode

I_T(AV)

1800A

V_RRM

800V   1000V

1200V  1400V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180。half sine wave 50Hz Double side cooled,

Tsink=55℃

125

1800

A

IRRM

Repetitive peak current

at VRRM

125

100

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

125

25

kA

I2t

I2t for fusing coordination

3125

A²s*10³

VFO

Threshold voltage

125

1.150

V

rF

Forward slope resistance

0.138

mΩ

VFM

Peak forward voltage

@ IFM=3000A

F=24kN

25

1.70

V

@ IFM=4500A

125

1.77

VFRM

Maximum forward recovery voltage

di/dt=1000A/µs

125

14

V

25

10

V

Irm

Reverse recovery current

IFM=1000A, tp=4000µs, -di/dt=60A/µs, VR=50V

125

50

A

trr

Reverse recovery time

3.0

µs

Qrr

Recovery charge

150

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 24kN

0.021

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.005

Fm

Mounting force

19

26

kN

Tjop

Operating temperature range

-40

125

℃

Tstg

Stored temperature

-40

150

℃

Wt

Weight

440

g

Outline

ZT50cT