Y40KSE,Bi-Directional Control Thyristor

IT(AV)

930

VDRM,VRRM

500V 800V

1000V 1200V

1400V 1600V

1800

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(RMS)

RMS current

50Hz sine wave

Double side cooled,

TC=55°C

125

1330

A

TC=85°C

125

930

VDRM

Repetitive peak reverse voltage

VDRM tp=10ms

VDSM = VDRM +100V

125

500

1800

V

IDRM

Repetitive peak current

at VDRM

125

50

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

8.8

kA

I2t

I2t for fusing coordination

387

A2s*103

VTO

Threshold voltage

125

0.78

V

rT

On-state slope resistance

0.89

mΩ

VTM

Peak on-state voltage

ITM=1200A, F=18kN

25

2.70

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

50

V/µs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 1000A,

Gate pulse tr ≤0.5μs IGM=1.5A Repetitive

125

50

A/µs

IGT

Gate trigger current

VA=12V, IA=1A

25

20

350

mA

VGT

Gate trigger voltage

0.8

3.5

V

IH

Holding current

20

400

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

double side cooled Clamping force 18kN

0.028

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.0075

Fm

Mounting force

15

20

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

320

g

Outline

KT39cT40