Y40KSEA,Bi-Directional Control Thyristor

IT(AV)

830A

VDRM,VRRM

500V   800V

1000V  1200V

1400V  1600V

1800

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(RMS)

RMS current

50Hz sine wave

Double side cooled,

TC=55°C

125

1210

A

TC=85°C

830

VDRM

Repetitive peak reverse voltage

VDRM tp=10ms

VDSM=VDRM+100V

125

500

1800

V

IDRM

Repetitive peak current

at VDRM

125

50

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

7.8

kA

I2t

I2t for fusing coordination

304

A2s* 103

VTO

Threshold voltage

125

1.00

V

rT

On-state slope resistance

0.85

mΩ

VTM

Peak on-state voltage

ITM= 1200A, F= 18kN

125

2.70

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

50

V/µs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 1000A,

Gate pulse tr ≤0.5μs IGM= 1.5A Repetitive

125

50

A/µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

20

350

mA

VGT

Gate trigger voltage

0.8

3.5

V

IH

Holding current

20

400

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

double side cooled     Clamping force 18kN

0.030

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.008

Fm

Mounting force

15

20

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

200

g

Outline

KA37