Y40KKG,Fast Turn-off Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Double side cooled,

TC=80°C

125

600

A

TC=55°C

800

A

VDRM VRRM

Repetitive peak off-state voltage Repetitive peak reverse voltage

tp=10ms

125

1900

3000

V

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

60

mA

ITSM

Surge on-state current

10ms half sine wave

125

8.5

kA

I2t

I2t for fusing coordination

361

A2s* 103

VTO

Threshold voltage

125

1.39

V

rT

On-state slope resistance

0.83

mΩ

VTM

Peak on-state voltage

ITM= 1800A, F= 18kN

30≤tq≤55

25

3.15

V

56≤tq≤75

2.88

V

76≤tq≤100

2.60

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 1600A,

Gate pulse tr ≤0.5μs IGM= 1.5A Single pulse

125

1200

A/μs

Qrr

Recovery charge

ITM= 1000A, tp=4000µs, di/dt=-20A/µs, VR= 100V

125

550

µC

tq

Circuit commutated turn-off time

ITM= 1000A, tp=4000µs, VR= 100V dv/dt=30V/µs , di/dt=-20A/µs

125

30

100

µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

40

300

mA

VGT

Gate trigger voltage

0.9

3.0

V

IH

Holding current

20

400

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

At 180° sine, double side cooled Clamping force 18kN

0.028

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.0075

Fm

Mounting force

15

20

kN

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

140

℃

Wt

Weight

320

g

Outline

KT39cT