Y38ZKG, Fast Recovery Diode

I_T(AV)

538A

V_RRM

4000V   4200V

4500V   5000V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85℃

538

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

4000

5000

V

IRRM

Repetitive peak current

at VRRM

150

50

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

7.5

kA

I2t

I2t for fusing coordination

281

A2s*103

VFO

Threshold voltage

150

1.89

V

rF

Forward slope resistance

1.18

mΩ

VFM

Peak forward voltage

ITM=1000A, F=15kN

25

3.80

V

Irm

Reverse recovery current

ITM=1000A, tp=4000µs, di/dt=-60A/µs, VR=100V

150

240

A

trr

Reverse recovery time

10

µs

Qrr

Recovery charge

720

900

µC

Rth(j-c)

Thermal resistance Junction to case

At 180° sine, double side cooled Clamping force15kN

0.035

℃ /W

Rth(c-h)

Thermal resistance case to heat sink

0.008

Fm

Mounting force

10

20

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

250

g

Outline

ZT33cT