Y35KSE,Bi-Directional Control Thyristor

IT(AV)

750

VDRM,VRRM

500V   800V

1000V  1200V

1400V  1600V

1800

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(RMS)

RMS current

50Hz sine wave

Double side cooled,

TC=55°C

125

1060

A

TC=85。C

125

750

VDRM

Repetitive peak reverse voltage

VDRM tp=10ms

VDSM  = VDRM  +100V

125

500

1800

V

IDRM

Repetitive peak current

at VDRM

125

40

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

7.6

kA

I2t

I2t for fusing coordination

288

A2s*103

VTO

Threshold voltage

125

0.84

V

rT

On-state slope resistance

1.01

mΩ

VTM

Peak on-state voltage

ITM=900A, F=15kN

25

2.70

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

50

V/µs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 1000A,

Gate pulse tr ≤0.5μs IGM=1.5A Repetitive

125

50

A/µs

IGT

Gate trigger current

VA=12V, IA=1A

25

20

300

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

20

300

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

double side cooled     Clamping force 15kN

0.035

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.008

Fm

Mounting force

10

20

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

240

g

Outline

KT33cT