Y30KSE,Bi-Directional Control Thyristor

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(RMS)

RMS current

50Hz sine wave

Double side cooled,

TC=55°C

125

730

A

TC=85。C

520

VDRM

Repetitive peak reverse voltage

VDRM tp=10ms

VDSM = VDRM +100V

125

500

1800

V

IDRM

Repetitive peak current

at VDRM

125

30

mA

ITSM

Surge on-state current

10ms half sine wave VR=0.6VRRM

125

5.0

kA

I2t

I2t for fusing coordination

125

A2s* 103

VTO

Threshold voltage

125

0.85

V

rT

On-state slope resistance

1.85

mΩ

VTM

Peak on-state voltage

ITM=450A, F=7.0kN

25

2.70

V

dv/dt

Critical rate of rise of off-state voltage

VDM=0.67VDRM

125

50

V/µs

di/dt

Critical rate of rise of on-state current

VDM= 67%VDRM to 800A,

Gate pulse tr ≤0.5μs IGM= 1.5A Repetitive

125

50

A/µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

20

200

mA

VGT

Gate trigger voltage

0.8

2.5

V

IH

Holding current

20

200

mA

IL

Latching current

500

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.3

V

Rth(j-c)

Thermal resistance Junction to case

double side cooled

Clamping force 7.0kN

0.045

。C /W

Rth(c-h)

Thermal resistance case to heat sink

0.010

Fm

Mounting force

5.3

10

kN

Tvj

Junction temperature

-40

125

。C

Tstg

Stored temperature

-40

140

。C

Wt

Weight

80

g

Outline

KT25aT