Y100ZPG,Rectifier Diode

I_T(AV)

5650A

V_RRM

4500V   5000V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=85。C

150

5650

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

4300

5000

V

IRRM

Repetitive peak current

at VRRM

150

300

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

60

kA

I2t

I2t for fusing coordination

18000

A²s*10³

VFO

Threshold voltage

150

0.91

V

rF

Forward slope resistance

0.10

mΩ

VFM

Peak forward voltage

IFM=5000A, F=108kN

25

2.00

V

Qrr

Recovery charge

IFM=2000A, tp=4000µs, di/dt=-20A/µs, VR=100V

150

9000

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 108kN

0.0050

℃/W

Rth(c-h)

Thermal resistance case to heat sink

0.0015

Fm

Mounting force

81

108

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

2000

g

Outline

ZT100cT