TG1800HF17H1-S500,IGBT Module,Half Bridge IGBT,CRRC

符号 Symbol

参数名称 Parameter

测试条件

Test Conditions

数值 Value

单位 Unit

VCES

集电极-发射极电压

Collector-emitter voltage

VGE = 0V, TC= 25 °C

1700

V

VGES

栅极-发射极电压

Gate-emitter voltage

TC= 25 °C

± 20

V

IC

集电极电流

Collector-emitter current

TC = 85 °C, Tvj max = 175°C

1800

A

IC(PK)

集电极峰值电流

Peak collector current

tP=1ms

3600

A

Pmax

晶体管部分最大损耗

Max. transistor power dissipation

Tvj = 175°C, TC = 25 °C

9.38

kW

I2t

二极管 I2t 值 Diode I2t

VR =0V, tP = 10ms, Tvj = 175 °C

551

kA2s

Visol

绝缘电压(模块)

Isolation voltage - per module

短接所有端子，端子与基板间施加电压 ( Connected terminals to base plate), AC RMS,1 min, 50Hz, TC= 25 °C

4000

V

参数 Symbol

说明

Explanation

值 Value

单位 Unit

爬电距离

Creepage distance

端子-散热器

Terminal to heatsink

36.0

mm

端子-端子

Terminal to terminal

28.0

mm

绝缘间隙 Clearance

端子-散热器

Terminal to heatsink

21.0

mm

端子-端子

Terminal to terminal

19.0

mm

相对漏电起痕指数

CTI (Comparative Tracking Index)

>400

符号 Symbol

参数名称 Parameter

测试条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值 Max.

单位 Unit

Rth(J-C) IGBT

IGBT 结壳热阻

Thermal resistance – IGBT

16

K / kW

Rth(J-C) Diode

二极管结壳热阻

Thermal resistance – Diode

33

K / kW

Rth(C-H) IGBT

接触热阻(IGBT)

Thermal resistance –

case to heatsink (IGBT)

安装力矩 5Nm, 导热脂 1W/m·K Mounting torque 5Nm,

with mounting grease 1W/m·K

14

K / kW

Rth(C-H) Diode

接触热阻(Diode)

Thermal resistance –

case to heatsink (Diode)

安装力矩 5Nm, 导热脂 1W/m·K Mounting torque 5Nm,

with mounting grease 1W/m·K

17

K / kW

Tvjop

工作结温

Operating junction temperature

IGBT 芯片 ( IGBT )

-40

150

°C

二极管芯片( Diode )

-40

150

°C

Tstg

存储温度

Storage temperature range

-40

150

°C

M

安装力矩

Screw torque

安装紧固用– M5 Mounting – M5

3

6

Nm

电路互连用– M4

Electrical connections – M4

1.8

2.1

Nm

电路互连用– M8

Electrical connections – M8

8

10

Nm

符号 Symbol

参数名称 Parameter

测试条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值 Max.

单位 Unit

Rth(J-C) IGBT

IGBT 结壳热阻

Thermal resistance – IGBT

16

K / kW

Rth(J-C) Diode

二极管结壳热阻

Thermal resistance – Diode

33

K / kW

Rth(C-H) IGBT

接触热阻(IGBT)

Thermal resistance –

case to heatsink (IGBT)

安装力矩 5Nm, 导热脂 1W/m·K Mounting torque 5Nm,

with mounting grease 1W/m·K

14

K / kW

Rth(C-H) Diode

接触热阻(Diode)

Thermal resistance –

case to heatsink (Diode)

安装力矩 5Nm, 导热脂 1W/m·K Mounting torque 5Nm,

with mounting grease 1W/m·K

17

K / kW

Tvjop

工作结温

Operating junction temperature

IGBT 芯片 ( IGBT )

-40

150

°C

二极管芯片( Diode )

-40

150

°C

Tstg

存储温度

Storage temperature range

-40

150

°C

M

安装力矩

Screw torque

安装紧固用– M5 Mounting – M5

3

6

Nm

电路互连用– M4

Electrical connections – M4

1.8

2.1

Nm

电路互连用– M8

Electrical connections – M8

8

10

Nm

符号 Symbol

参数名称 Parameter

测试条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值 Max.

单位 Unit

R25

额定电阻值

Rated resistance

TC = 25 °C

5

kΩ

△R/R

R100 偏差

Deviation of R100

TC = 100 °C, R100=493Ω

-5

5

%

P25

耗散功率

Power dissipation

TC = 25 °C

20

mW

B25/50

B-值

B-value

R2 = R25exp [B25/50(1/T2 - 1/(298.15 K))]

3375

K

B25/80

B-值

B-value

R2 = R25exp [B25/80(1/T2 - 1/(298.15 K))]

3411

K

B25/100

B-值

B-value

R2 = R25exp [B25/100(1/T2 - 1/(298.15 K))]

3433

K

符号 Symbol

参数名称 Parameter

条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值 Max.

单位 Unit

ICES

集电极截止电流

Collector cut-off current

VGE = 0V,VCE = VCES

1

mA

VGE = 0V, VCE = VCES, Tvj =150 °C

40

mA

VGE = 0V, VCE = VCES, Tvj =175 °C

60

mA

IGES

栅极漏电流

Gate leakage current

VGE = ±20V, VCE = 0V

0.5

μA

VGE (th)

栅极-发射极阈值电压 Gate threshold voltage

IC = 60mA, VGE = VCE

5.1

5.7

6.3

V

VCE (sat)(*1)

集电极-发射极饱和电压

Collector-emitter saturation

voltage

VGE =15V, IC = 1800A

1.70

V

VGE =15V, IC = 1800A, Tvj = 150 °C

2.10

V

VGE =15V, IC = 1800A, Tvj = 175 °C

2.15

V

IF

二极管正向直流电流 Diode forward current

DC

1800

A

IFRM

二极管正向重复峰值电流 Diode peak forward current

tP = 1ms

3600

A

VF(*1)

二极管正向电压

Diode forward voltage

IF = 1800A, VGE = 0

1.60

V

IF = 1800A, VGE = 0, Tvj = 150 °C

1.75

V

IF = 1800A, VGE = 0, Tvj = 175 °C

1.75

V

ISC

短路电流

Short circuit current

Tvj = 175°C, VCC = 1000V, VGE ≤15V, tp ≤10μs,

VCE(max) = VCES – L(*2) ×di/dt, IEC 60747-9

7400

A

Cies

输入电容

Input capacitance

VCE = 25V, VGE = 0V, f = 100kHz

542

nF

Qg

栅极电荷

Gate charge

±15V

23.6

μC

Cres

反向传输电容

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 100kHz

0.28

nF

LsCE

模块杂散电感

Module stray inductance

8.4

nH

RCC’+EE’

模块引线电阻，端子-芯片 Module lead resistance, terminal-chip

每开关

per switch

0.20

mΩ

RGint

内部栅极电阻

Internal gate resistor

1

Ω

符号 Symbol

参数名称 Parameter

测试条件

Test Conditions

最小值 Min.

典型值 Typ.

最大值 Max.

单位 Unit

td(off)

关断延迟时间

Turn-off delay time

IC =1800A,

VCE = 900V,

VGE = ±15V, RG(OFF) = 0.5Ω, LS = 25nH,

dv/dt =3800V/μs (Tvj= 150 °C).

Tvj= 25 °C

1000

ns

Tvj= 150 °C

1200

Tvj= 175 °C

1250

tf

下降时间 Fall time

Tvj= 25 °C

245

ns

Tvj= 150 °C

420

Tvj= 175 °C

485

EOFF

关断损耗

Turn-off energy loss

Tvj= 25 °C

425

mJ

Tvj= 150 °C

600

Tvj= 175 °C

615

td(on)

开通延迟时间

Turn-on delay time

IC =1800A,

VCE = 900V,

VGE = ±15V, RG(ON) = 0.5Ω, LS = 25nH,

di/dt = 8500A/μs (Tvj= 150 °C).

Tvj= 25 °C

985

ns

Tvj= 150 °C

1065

Tvj= 175 °C

1070

tr

上升时间 Rise time

Tvj= 25 °C

135

ns

Tvj= 150 °C

205

Tvj= 175 °C

210

EON

开通损耗

Turn-on energy loss

Tvj= 25 °C

405

mJ

Tvj= 150 °C

790

Tvj= 175 °C

800

Qrr

二极管反向恢复电荷 Diode reverse

recovery charge

IF =1800A, VCE = 900V,

- diF/dt = 8500A/μs (Tvj= 150 °C).

Tvj= 25 °C

420

μC

Tvj= 150 °C

695

Tvj= 175 °C

710

Irr

二极管反向恢复电流 Diode reverse

recovery current

Tvj= 25 °C

1330

A

Tvj= 150 °C

1120

Tvj= 175 °C

1100

Erec

二极管反向恢复损耗 Diode reverse

recovery energy

Tvj= 25 °C

265

mJ

Tvj= 150 °C

400

Tvj= 175 °C

420