T50ZPR,Rectifier Diode

I_T(AV)

970A

V_RRM

5600V   6000V   

6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=100℃

150

970

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

5600

6500

V

IRRM

Repetitive peak current

At VRRM

150

100

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

16.5

kA

I2t

I2t for fusing coordination

1361

A²s*10³

VFO

Threshold voltage

150

0.91

V

rF

Forward slope resistance

0.60

mΩ

VFM

Peak forward voltage

IFM=1500A, F=26kN

25

2.15

V

Qrr

Recovery charge

IFM=1000A, tp=4000µs,  di/dt=-20A/µs, VR=100V

3500

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 26kN

0.022

℃/W

Rth(c-h)

Thermal resistance case to heatsink

0.005

Fm

Mounting force

19

26

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

440

g

Outline

ZT50cT/ ZT50dT