T38ZPR,Rectifier Diode

I_T(AV)

500A

V_RRM

5600V   6000V   

6500V

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Double side cooled,

TC=100℃

150

500

A

VRRM

Repetitive peak reverse voltage

tp=10ms

150

5600

6500

V

IRRM

Repetitive peak current

at VRRM

150

50

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

9.5

kA

I2t

I2t for fusing coordination

451

A²s*10³

VFO

Threshold voltage

150

0.89

V

rF

Forward slope resistance

1.05

mΩ

VFM

Peak forward voltage

IFM=1000A, F=20kN

25

2.20

V

Qrr

Recovery charge

IFM=1000A, tp=4000µs, di/dt=-5A/µs, VR=100V

150

2500

µC

Rth(j-c)

Thermal resistance Junction to case

At 180°sine, double side cooled Clamping force 20.0kN

0.045

℃/W

Rth(c-h)

Thermal resistance case to heatsink

0.008

Fm

Mounting force

10

15

20

kN

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

160

℃

Wt

Weight

340

g

Outline

ZT33cT / ZT33dT