Brief introduction:
High voltage, single switch IGBT modules produced by CRRC. 4500V 900A.
Features
SPT+chip-set for low switching losses |
Low VCEsat |
Low drivering power |
AlSiC base plate for high power cycling capability |
AlN substrate for low thermal resistance |
Typical application
Traction drives |
DC chopper |
High voltage inverters/converters |
Maximum rated values
Parameter/参数 | Symbol/符号 | Conditions/条件 | min | max | Unit |
Collector-emitter voltage 集电极-发射极电压 | VCES | VGE =0V,Tvj ≥25°C |
| 4500 | V |
DC collector current 集电极电流 | IC | TC =80°C |
| 900 | A |
Peak collector current 集电极峰值电流 | ICM | tp=1ms,Tc=80°C |
| 1800 | A |
Gate-emitter voltage 栅极发射极电压 | VGES |
| -20 | 20 | V |
Total power dissipation 总功率损耗 | Ptot | TC =25°C,perswitch(IGBT) |
| 8100 | W |
DC forward current 直流正向电流 | IF |
|
| 900 | A |
Peak forward current 峰值正向电流 | IFRM | tp=1ms |
| 1800 | A |
Surge current 浪涌电流 | IFSM | VR =0V,Tvj =125°C,tp=10ms, half-sine wave |
| 6700 | A |
IGBT short circuit SOA IGBT 短路安全工作区 |
tpsc |
VCC =3400V,VCEMCHIP≤4500V VGE ≤15V,Tvj≤125°C |
|
10 |
μs |
Isolation voltage 绝缘电压 | Visol | 1min,f=50Hz |
| 10200 | V |
Junction temperature 结温 | Tvj |
|
| 150 | ℃ |
Junction operating temperature 工作结温 | Tvj(op) |
| -50 | 125 | ℃ |
Case temperature 壳温 | TC |
| -50 | 125 | ℃ |
Storage temperature 储存温度 | Tstg |
| -50 | 125 | ℃ |
Mounting torques 安装力矩 | MS |
| 4 | 6 | Nm |
MT1 |
| 8 | 10 | ||
MT2 |
| 2 | 3 |
|
IGBT characteristic values
Parameter/参数 | Symbol/符号 | Conditions/条件 | Min | type | max | Unit | |
Collector (- emitter) breakdown voltage 集电极-发射极阻断电压 |
V(BR)CES | VGE =0V,IC=10mA, Tvj=25°C |
4500 |
|
|
V | |
Collector-emitter saturation voltage 集电极-发射极饱和电压 |
VCEsat | IC =900A, VGE =15V | Tvj= 25°C |
| 2.7 | 3.2 | V |
Tvj=125°C |
| 3.4 | 3.8 | V | |||
Collector cut off current 集电极截止电流 | ICES | VCE =4500V, VGE =0V | Tvj= 25°C |
|
| 10 | mA |
Tvj=125°C |
|
| 100 | mA | |||
Gate leakage current 栅极漏电流 | IGES | VCE =0V,VGE =20V, Tvj =125°C | -500 |
| 500 | nA | |
Gate-emitter threshold voltage 栅极发射极阀值电压 | VGE(TH) | IC =240mA,VCE =VGE, Tvj =25°C | 4.5 |
| 6.5 | V | |
Gate charge 栅极电荷 | Qg | IC =900A,VCE =2800V, VGE =-15V … 15V |
| 8.1 |
| µC | |
Input capacitance 输入电容 | Cies |
VCE =25V,VGE =0V, f=1MHz,Tvj =25°C |
| 105.6 |
|
nF | |
Output capacitance 输出电容 | Coes |
| 7.35 |
| |||
Reverse transfer capacitance 反向转移电容 | Cres |
| 2.04 |
| |||
Turn-on delay time 开通延迟时间 | td(on) |
VCC =2800V, IC =900A, RG =2.2Ω , VGE =±15V, Lσ=280nH, 感性负载 | Tvj = 25 °C |
| 680 |
|
ns |
Tvj = 125 °C |
| 700 |
| ||||
Rise time 上升时间 | tr | Tvj = 25 °C |
| 230 |
| ||
Tvj = 125 °C |
| 240 |
| ||||
Turn-off delay time 关断延迟时间 | td(off) | Tvj = 25 °C |
| 2100 |
|
ns | |
Tvj = 125 °C |
| 2300 |
| ||||
Fall time 下降时间 | tf | Tvj = 25 °C |
| 1600 |
| ||
Tvj = 125 °C |
| 2800 |
| ||||
Turn-on switching loss energy 开通损耗能量 | Eon | Tvj = 25 °C |
| 1900 |
| mJ | |
Tvj =125 °C |
| 2500 |
| ||||
Turn-off switching loss energy 关断损耗能量 | Eoff | Tvj = 25 °C |
| 3100 |
| mJ | |
Tvj =125 °C |
| 3800 |
| ||||
Short circuit current 短路电流 | ISC | tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 3400V |
| 3600 |
| A | |
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