MZx75,Fast Recovery Diode module,TECHSEM

VRRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

1800V

MZx75-06-216F3

MZx75-08-216F3

MZx75-10-216F3

MZx75-12-216F3

MZx75-14-216F3

MZx75-16-216F3

MZx75-18-216F3

MZ75-18-216F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz

Single side cooled, TC=85℃

140

75

A

IF(RMS)

RMS forward current

118

A

IRRM

Repetitive peak current

at VRRM

140

20

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

140

2.0

kA

I2t

I2t for fusing coordination

20

10³A²s

VFO

Threshold voltage

140

1.10

V

rF

Forward slope resistance

3.00

m

VFM

Peak forward voltage

IFM=225A

25

2.00

V

trr

Reverse recovery time

IFM=200A,tp=4000μs, -di/dt=20A/μs,VR=50V

140

3.0

μs

25

2.0

μs

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.310

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.080

℃ /W

Fm

Terminal connection torque(M6)

4.5

6.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Tvj

Junction temperature

-40

140

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

320

g

Outline

216F3