MZx400,Fast Recovery Diode module,TECHSEM

VRRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

1800V

MZx400-06-410F3

MZx400-08-410F3

MZx400-10-410F3

MZx400-12-410F3

MZx400-14-410F3

MZx400-16-410F3

MZx400-18-410F3

MZ400-18-410F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180。half sine wave 50Hz

Single side cooled, TC=85。C

140

400

A

IF (RMS)

RMS forward current

628

A

IRRM

Repetitive peak current

at VRRM

140

90

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

140

9.5

kA

I²t

I2t for fusing coordination

451

10³A²s

VFO

Threshold voltage

140

1.10

V

rF

Forward slope resistance

0.27

mΩ

VFM

Peak forward voltage

IFM= 1200A

25

2.00

V

trr

Reverse recovery time

IFM=300A, tp=4000μs, -di/dt=20A/μs, VR=50V

140

4

μs

25

3

μs

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.090

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.020

℃ /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M12)

12.0

14.0

N·m

Mounting torque(M8)

10.0

12.0

N·m

Tvj

Junction temperature

-40

140

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

3310

g

Outline

410F3