MZx300,Fast Recovery Diode module,TECHSEM

VRRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

1800V

MZx400-06-406F3

MZx400-08-406F3

MZx400-10-406F3

MZx400-12-406F3

MZx400-14-406F3

MZx400-16-406F3

MZx400-18-406F3

MZx400-18-406F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz Single side cooled,TC=60℃

150

400

A

IF (RMS)

RMS forward current

628

A

IRRM

Repetitive peak current

at VRRM

150

70

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

150

8.30

kA

I2t

I2t for fusing coordination

344

A²s*103

VFO

Threshold voltage

150

1.0

V

rF

Forward slope resistance

0.85

m

VFM

Peak forward voltage

IFM= 1200A

25

2.1

V

trr

Reverse recovery time

IFM=300A,tp=4000μs, -di/dt=20A/μs,VR=50V

150

4.0

μs

25

2.0

μs

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.130

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.040

℃ /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M10)

10.0

12.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1580

g

Outline

406F3