MZ250,Fast Recovery Diode module,TECHSEM

VRRM

Type & Outline

2000V

2200V

2500V

2800V

3000V

MZ250-20-417F2

MZ250-22-417F2

MZ250-25-417F2

MZ250-28-417F2

MZ250-30-417F2

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(°C)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180° half sine wave 50Hz

Single side cooled, TC=85°C

140

250

A

IF(RMS)

RMS forward current

392

A

IRRM

Repetitive peak current

at VRRM

140

50

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

140

8

kA

I²t

I²t for fusing coordination

320

10³A²s

VFO

Threshold voltage

140

1.85

V

rF

Forward slope resistance

0.50

mΩ

VFM

Peak forward voltage

IFM=750A

25

2.67

V

trr

Reverse recovery time

IFM=300A, tp=4000μs, -di/dt=20A/μs, VR= 100V

140

4

μs

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.065

°C /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.030

°C /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M10)

10

12

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

140

°C

Tstg

Stored temperature

-40

125

°C

Wt

Weight

770

g

Outline

417F2