MZ100,Fast Recovery Diode module,TECHSEM

VRRM

Type & Outline

600V

MZ100-06-210F2NA

MZ100-06-210F2NK

800V

MZ100-08-210F2NA

MZ100-08-210F2NK

1000V

MZ100-10-210F2NA

MZ100-10-210F2NK

1200V

MZ100-12-210F2NA

MZ100-12-210F2NK

1400V

MZ100-14-210F2NA

MZ100-14-210F2NK

1600V

MZ100-16-210F2NA

MZ100-16-210F2NK

1800V

MZ100-18-210F2NA

MZ100-18-210F2NK

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz

Single side cooled,TC= 100℃

140

100

A

IF (RMS)

RMS forward current

157

A

IRRM

Repetitive peak current

at VRRM

140

30

mA

IFSM

Surge forward current

10ms half sine wave VR=0.6VRRM

140

3.5

kA

I2t

I2t for fusing coordination

61

A²s* 10³

VFO

Threshold voltage

140

1.05

V

rF

Forward slope resistance

1.80

mΩ

VFM

Peak forward voltage

IFM=300A

25

1.90

V

trr

Reverse recovery time

IFM=200A, tp=4000μs, -di/dt=20A/μs, VR= 100V

140

4

μs

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.200

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.080

℃ /W

Fm

Terminal connection torque(M6)

6.0

N·m

Mounting torque(M6)

6.0

N·m

Tvj

Junction temperature

-40

140

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

185

g

Outline

210F2