MTx800 MFx800 MT800,Thyristor/Diode Modules,Air Cooling

800A,2000V~2500V,410F3

Brand:

TECHSEM

Spu:

MTx800 MFx800 MT800

Brief introduction

Thyristor/Diode module, MTx800 MFx800 MT800，800A,Air cooling，produced by TECHSEM .

MTx stands for any type of MTC, MTA, MTK

MFx stands for any type of MFC, MFA, MFK

Features

Typical Applications

SYMBOL	CHARACTERISTIC	TEST CONDITIONS	Tj(℃)	VALUE			UNIT
SYMBOL	CHARACTERISTIC	TEST CONDITIONS	Tj(℃)	Min	Type	Max	UNIT
IT(AV)	Mean on-state current	180°half sine wave 50Hz Single side cooled, TC=70℃	125			800	A
IT(RMS)	RMS on-state current	180°half sine wave 50Hz Single side cooled, TC=70℃	125			1256	A
IDRM IRRM	Repetitive peak current	at VDRM at VRRM	125			45	mA
ITSM	Surge on-state current	VR=60%VRRM,t=10ms half sine,	125			22.0	kA
I2t	I2t for fusing coordination	VR=60%VRRM,t=10ms half sine,	125			2420	103A2s
VTO	Threshold voltage		125			0.80	V
rT	On-state slope resistance		125			0.24	mΩ
VTM	Peak on-state voltage	ITM=2400A	25			1.68	V
dv/dt	Critical rate of rise of off-state voltage	VDM=67%VDRM	125			1000	V/μs
di/dt	Critical rate of rise of on-state current	Gate source 1.5A tr ≤0.5μs Repetitive	125			200	A/μs
IGT	Gate trigger current	VA=12V, IA=1A	25	30		200	mA
VGT	Gate trigger voltage			0.8		3.0	V
IH	Holding current			10		200	mA
IL	Latching current					1500	mA
VGD	Non-trigger gate voltage	VDM=67%VDRM	125			0.20	V
Rth(j-c)	Thermal resistance Junction to case	Single side cooled per chip				0.048	℃)/W
Rth(c-h)	Thermal resistance case to heatsink	Single side cooled per chip				0.020	℃)/W
Viso	Isolation voltage	50Hz,R.M.S,t=1min,Iiso:1mA(MAX)		3000			V
Fm	Terminal connection torque(M12)			12.0		16.0	N·m
Fm	Mounting torque(M8)			10.0		12.0	N·m
Tvj	Junction temperature			-40		125	℃)
Tstg	Stored temperature			-40		125	℃)
Wt	Weight				3310		g
Outline	410F3