MTG200,MTY200,Thyristor Modules(Non-isolated Type) ,TECHSEM

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz

Single side cooled, TC=90℃

125

200

A

IT(RMS)

RMS on-state current

314

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

20

mA

ITSM

Surge on-state current

VR=60%VRRM, t=10ms half sine

125

5.2

kA

I2t

I2t for fusing coordination

125

135

10³A²s

VTO

Threshold voltage

125

0.80

V

rT

On-state slope resistance

1.15

mΩ

VTM

Peak on-state voltage

ITM=600A

25

1.62

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

800

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

100

A/μs

IGT

Gate trigger current

VA=12V, IA=1A

25

30

150

mA

VGT

Gate trigger voltage

0.8

2.5

V

IH

Holding current

10

180

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

At 180。sine, Single side cooled per chip

0.13

℃/W

Rth(c-h)

Thermal resistance case to heatsink

At 180°sine, Single side cooled per chip

0.10

℃/W

Fm

Terminal connection torque(M6)

4.5

6.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

280

g

Outline

213F4