MTC200,Welding Thyristor rectifier module,Air cooling

VDRM,VRRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

MTC200-06-229H3/229H3B

MTC200-08-229H3/229H3B

MTC200-10-229H3/229H3B

MTC200-12-229H3/229H3B

MTC200-14-229H3/229H3B

MTC200-16-229H3/229H3B

MTC200-18-229H3/229H3B

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Single side cooled, Tc=85℃

125

200

A

IT(RMS)

RMS on-state current

125

314

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

40

mA

ITSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

4.0

kA

I2t

I2t for fusing coordination

80

A²s*10³

VTO

Threshold voltage

125

0.70

V

rT

On-state slope resistance

1.11

mΩ

VTM

Peak on-state voltage

ITM=600A

25

1.80

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

1000

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

0.6

2.5

V

IH

Holding current

10

250

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.16

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.08

℃ /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M6)

2.5

4.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

165

g

Outline

229H3、229H3B