MRC100-12,Super Fast Recovery Diode module,TECHSEM

VRRM

Type & Outline

1200V

MRC100-12-224H3

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

TC=75℃, Per Diode

150

100

A

TC=85℃, 20KHz, Per Module

75

A

IF(RMS)

RMS forward current

TC=75℃, Per Diode

150

A

IRRM

Repetitive peak current

at VRRM

125

10

mA

IFSM

Surge forward current

VR=0V, tp=10ms

45

1100

A

VR=0V,tp=8.3ms

45

1200

I²t

I²t for fusing coordination

VR=0V, tp=10ms

45

6050

10³A²s

VR=0V,tp=8.3ms

45

7200

PD

Maximum power dissipation

280

W

VFM

Peak forward voltage

IFM= 100A

25

1.58

1.80

V

125

1.35

trr

Reverse recovery time

I F= 1A, diF/dt=-200A/μs, VR=30V

25

90

ns

trr

Reverse recovery time

VR=600V, IF=100A, diF/dt=-200A/μs

25

160

ns

IRM

Reverse current

10

A

trr

Reverse recovery time

125

400

ns

IRM

Reverse current

21

A

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine. Single side cooled per chip

0.40

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min

3000

V

Fm

Terminal connection torque(M5)

2.55

3.45

N·m

Mounting torque(M6)

4.25

5.75

N·m

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

100

g

Outline

224H3