MK(H)x400 MK400,Fast Turn-off Thyristor Modules,Air Cooling

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Single side cooled,Tc=85℃

125

400

A

IT(RMS)

RMS on-state current

628

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

100

mA

I_TSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

8

kA

I²t

I2t for fusing coordination

320

A²s* 10³

V_TO

Threshold voltage

125

0.83

V

rT

On-state slope resistance

0.72

mΩ

V_TM

Peak on-state voltage

ITM= 1200A

25

2.40

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

800

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

Qrr

Recovery charge

ITM=300A, tp=4000µs, di/dt=-20A/µs, VR= 100V

125

650

µC

tq

Circuit commutated turn-off time

ITM=300A, tp=4000µs, VR=100V dv/dt=30V/µs, di/dt=-20A/µs

125

15

35

µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

10

200

mA

VGD

Non-trigger gate voltage

VDM=67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.065

℃ /W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.023

℃ /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

2500

V

Fm

Terminal connection torque(M10)

12.0

N·m

Mounting torque(M6)

6.0

N·m

Tvj

Junction temperature

-40

115

℃

Tstg

Stored temperature

-40

115

℃

Wt

Weight

1500

g

Outline

416F3