MK(H)x300 MK300,Fast Turn-off Thyristor Modules,Water Cooling

VRRM,VDRM

Type & Outline

600V

MKx300-06-415F3

MHx300-06-415F3

800V

MKx300-08-415F3

MHx300-08-415F3

1000V

MKx300-10-415F3

MHx300-10-415F3

1200V

MKx300-12-415F3

MHx300-12-415F3

1400V

MKx300-14-415F3

MHx300-14-415F3

1600V

MKx300-16-415F3

MHx300-16-415F3

1800V

MKx300-18-415F3

MHx300-18-415F3

1800V

MK300-18-415F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180。half sine wave 50Hz Single side cooled,

Tc=85℃

125

300

A

IT(RMS)

RMS on-state current

471

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

80

mA

ITSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

7.30

kA

I2t

I2t for fusing coordination

266

10³A²s

VTO

Threshold voltage

125

1.36

V

rT

On-state slope resistance

0.38

mΩ

VTM

Peak on-state voltage

ITM=900A

25

2.20

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

800

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

tq

Circuit commutated turn-off time

ITM=300A, tp=4000µs,VR= 100V dv/dt=30V/µs, di/dt=-20A/µs

125

20

40

µs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

1.0

3.0

V

IH

Holding current

20

200

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM= 67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.080

。C/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.040

。C/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

2500

V

Fm

Terminal connection torque(M10)

10.0

12.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1260

g

Outline

415F3