MK(H)x250 MK250,Fast Turn-off Thyristor Modules,Air Cooling

VRRM,VDRM

Type & Outline

600V

MKx250-06-415F3

MHx250-06-415F3

800V

MKx250-08-415F3

MHx250-08-415F3

1000V

MKx250-10-415F3

MHx250-10-415F3

1200V

MKx250-12-415F3

MHx250-12-415F3

1400V

MKx250-14-415F3

MHx250-14-415F3

1600V

MKx250-16-415F3

MHx250-16-415F3

1800V

MKx250-18-415F3

MHx250-18-415F3

1800V

MK250-18-415F3G

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IT(AV)

Mean on-state current

180°half sine wave 50Hz Single side cooled,Tc=85℃

125

250

A

IT(RMS)

RMS on-state current

392

A

IDRM IRRM

Repetitive peak current

at VDRM at VRRM

125

80

mA

ITSM

Surge on-state current

10ms half sine wave VR=60%VRRM

125

5.60

kA

I²t

I2t for fusing coordination

157

10³A²s

VTO

Threshold voltage

125

1.30

V

rT

On-state slope resistance

0.38

m

VTM

Peak on-state voltage

ITM=750A

25

2.69

V

dv/dt

Critical rate of rise of off-state voltage

VDM=67%VDRM

125

800

V/μs

di/dt

Critical rate of rise of on-state current

Gate source 1.5A

tr ≤0.5μs Repetitive

125

200

A/μs

tq

Circuit commutated turn-off time

ITM=300A, tp=4000μs, VR=100V dv/dt=30V/μs ,di/dt=-20A/μs

125

20

40

μs

25

6

16

μs

IGT

Gate trigger current

VA= 12V, IA= 1A

25

30

200

mA

VGT

Gate trigger voltage

0.8

3.0

V

IH

Holding current

20

200

mA

IL

Latching current

1000

mA

VGD

Non-trigger gate voltage

VDM= 67%VDRM

125

0.2

V

Rth(j-c)

Thermal resistance Junction to case

Single side cooled per chip

0.100

℃/W

Rth(c-h)

Thermal resistance case to heatsink

Single side cooled per chip

0.040

℃ /W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

2500

V

Fm

Terminal connection torque(M10)

10.0

12.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

125

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

1260

g

Outline

415F3