MDx200,Diode Modules(Non-isolated Type) ,TECHSEM

VRRM

Type & Outline

800V 1000V 1200V 1400V 1600V 1800V

MDx200-08-213F4 MDx200-10-213F4 MDx200-12-213F4 MDx200-14-213F4 MDx200-16-213F4 MDx200-18-213F4

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(。C)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz

Single side cooled, TC=100℃

150

200

A

IF(RMS)

RMS forward current

314

A

IRRM

Repetitive peak current

at VRRM

150

20

mA

IFSM

Surge forward current

VR=60%VRRM, t=10ms half sine

150

6.2

kA

I2t

I2t for fusing coordination

192

103A2s

VFO

Threshold voltage

150

0.80

V

rF

Forward slope resistance

0.96

mΩ

VFM

Peak forward voltage

IFM=600A

25

1.50

V

Rth(j-c)

Thermal resistance Junction to case

At 180°sine. Single side cooled per chip

0.20

℃/W

Rth(c-h)

Thermal resistance case to heatsink

At 180°sine. Single side cooled per chip

0.10

℃/W

Fm

Terminal connection torque(M6)

4.5

6.0

N·m

Mounting torque(M6)

4.5

6.0

N·m

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

280

g

Outline

213F4