MDC110,Welding Diode module,Air cooling

VRRM

Type & Outline

600V

800V

1000V

1200V

1400V

1600V

1800V

MDC110-06-229H3

MDC110-08-229H3

MDC110-10-229H3

MDC110-12-229H3

MDC110-14-229H3

MDC110-16-229H3

MDC110-18-229H3

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

Tj(℃)

VALUE

UNIT

Min

Type

Max

IF(AV)

Mean forward current

180°half sine wave 50Hz

Single side cooled, TC=100℃

150

110

A

IF(RMS)

RMS forward current

173

A

IRRM

Repetitive peak current

at VRRM

150

8

mA

IFSM

Surge forward current

VR=60%VRRM,,t= 10ms half sine,

150

2.0

kA

I2t

I2t for fusing coordination

20.0

10³A²s

VFO

Threshold voltage

150

0.80

V

rF

Forward slope resistance

1.74

mΩ

VFM

Peak forward voltage

IFM=330A

25

1.55

V

Rth(j-c)

Thermal resistance Junction to case

At 1800 sine. Single side cooled per chip

0.35

℃/W

Rth(c-h)

Thermal resistance case to heatsink

At 1800 sine. Single side cooled per chip

0.20

℃/W

Viso

Isolation voltage

50Hz,R.M.S,t= 1min,Iiso:1mA(MAX)

3000

V

Fm

Terminal connection torque(M5)

2.5

4

N·m

Mounting torque(M6)

4.5

6

N·m

Tvj

Junction temperature

-40

150

℃

Tstg

Stored temperature

-40

125

℃

Wt

Weight

100

g

Outline

224H3