Brief introduction
IGBT module,High voltage, single switch IGBT modules produced by CRRC. 3300V 400A.
Features
●SPT+chip-set for low switching losses |
●Low VCEsat |
●Low drivering power |
●AlSiC base plate for high power cycling capability |
●AlN substrate for low thermal resistance |
Typical application
●Traction drives |
●DC chopper |
●Medium voltage inverters/converters |
Maximum rated values
Parameter | Symbol | Conditions | min | max | Unit |
Collector-emitter voltage | VCES | VGE =0V,Tvj ≥25°C |
| 3300 | V |
DC collector current | IC | TC =80°C |
| 400 | A |
Peak collector current | ICM | tp=1ms,Tc=80°C |
| 800 | A |
Gate-emitter voltage | VGES |
| -20 | 20 | V |
Total power dissipation | Ptot | TC =25°C,perswitch(IGBT) |
| 7100 | W |
DC forward current | IF |
|
| 400 | A |
Peak forward current | IFRM | tp=1ms |
| 800 | A |
Surge current | IFSM | VR =0V,Tvj =125°C,tp=10ms, half-sine wave |
| 3000 | A |
IGBT short circuit SOA | tpsc | VCC =2500V,VCEMCHIP ≤3300V VGE ≤15V,Tvj≤125°C |
| 10 | μs |
Isolation voltage | Visol | 1min,f=50Hz |
| 10200 | V |
Junction temperature | Tvj |
|
| 150 | ℃ |
Junction operating temperature | Tvj(op) |
| -50 | 150 | ℃ |
Case temperature | TC |
| -50 | 125 | ℃ |
Storage temperature | Tstg |
| -50 | 125 | ℃ |
Mounting torques | MS | Base-heatsink ，M6 screws | 4 | 6 |
Nm |
MT1 | Main terminals ，M8 screws | 8 | 10 |
IGBT characteristic values
Parameter | Symbol | Conditions | Min | type | max | Unit | |
Collector (- emitter) breakdownvoltage | V(BR)CES | VGE =0V,IC=5mA, Tvj=25°C | 3300 |
|
| V | |
Collector-emitter saturation voltage | VCEsat | IC =400A, VGE =15V | Tvj= 25°C |
| 3.0 |
| V |
Tvj=125°C |
| 3.6 |
| V | |||
Collector cut off current | ICES | VCE =3300V, VGE =0V | Tvj= 25°C |
|
| 5 | mA |
Tvj=125°C |
|
| 50 | mA | |||
Gate leakage current | IGES | VCE =0V,VGE =20V, Tvj =125°C | -500 |
| 500 | nA | |
Gate-emitter threshold voltage | VGE(TH) | IC =80mA,VCE =VGE, Tvj =25°C | 5.5 |
| 7.5 | V | |
Gate charge | Qg | IC =400A,VCE =1800V, VGE =-15V … 15V |
| 4.0 |
| µC | |
Input capacitance | Cies |
VCE =25V,VGE =0V, f=1MHz,Tvj =25°C |
| 65 |
|
nF | |
Output capacitance | Coes |
| 3.7 |
| |||
Reverse transfer capacitance | Cres |
| 0.8 |
| |||
Turn-on delay time | td(on) |
VCC =1800V, IC =400A, RG =2.3Ω , VGE =±15V, Lσ=280nH, 感性负载 | Tvj = 25 °C |
| 650 |
|
ns |
Tvj = 125 °C |
| 750 |
| ||||
Rise time | tr | Tvj = 25 °C |
| 400 |
| ||
Tvj = 125 °C |
| 470 |
| ||||
Turn-off delay time | td(off) | Tvj = 25 °C |
| 1600 |
|
ns | |
Tvj = 125 °C |
| 1800 |
| ||||
Fall time | tf | Tvj = 25 °C |
| 1100 |
| ||
Tvj = 125 °C |
| 1200 |
| ||||
Turn-on switching loss energy | Eon | Tvj = 25 °C |
| 1400 |
| mJ | |
Tvj = 125 °C |
| 1800 |
| ||||
Turn-off switching loss energy | Eoff | Tvj = 25 °C |
| 1300 |
| mJ | |
Tvj = 125 °C |
| 1700 |
| ||||
Short circuit current | ISC | tpsc ≤ 10μs, VGE =15V, Tvj = 125°C,VCC = 2500V |
| 2500 |
| A | |
Diode characteristic values
Parameter | Symbol | Conditions | min | type | max | Unit | |
Forward voltage | VF | IF =400A | Tvj = 25 °C |
| 2.3 | 2.6 | V |
Tvj = 125 °C |
| 2.35 | 2.6 | ||||
Reverse recovery current | Irr |
VCC =1800V, IC =400A, RG =2.3Ω , VGE =±15V, Lσ=280nH, | Tvj = 25 °C |
| 900 |
| A |
Tvj = 125 °C |
| 1000 |
| ||||
Recovered charge | Qrr | Tvj = 25 °C |
| 700 |
| µC | |
Tvj = 125 °C |
| 1000 |
| ||||
Reverse recovery time | trr | Tvj = 25 °C |
| 850 |
| ns | |
Tvj = 125 °C |
| 2200 |
| ||||
Reverse recovery energy | Erec | Tvj =25 °C |
| 850 |
| mJ | |
Tvj = 125 °C |
| 1300 |
| ||||
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