YMIF1000-33,IGBT Module,Single Switch IGBT,CRRC

IGBT Module，3300V 1000A

Brand:

CRRC

Spu:

YMIF1000-33

Brief introduction

High voltage, single switch IGBT modules produced by CRRC. 3300V 1000A.

Key Parameters

Typical Applications

Typical Applications

Absolute Maximum Rating

(Symbol)	(Parameter)	(Test Conditions)	(value)	(Unit)
VCES	Collector-emitter voltage	VGE = 0V, TC= 25 °C	3300	V
VGES	Gate-emitter voltage	TC= 25 °C	± 20	V
I C	Collector-emitter current	TC = 95 °C	1000	A
IC(PK)	Peak collector current	t P= 1ms	2000	A
P max	Max. transistor power dissipation	Tvj = 150°C, TC = 25 °C	10.4	kW
I 2t	Diode I2t	VR =0V, t P = 10ms, Tvj = 150 °C	320	kA2s
Visol	Isolation voltage – per module	Commoned terminals to base plate), AC RMS,1 min, 50Hz,TC= 25 °C	6000	V
Q PD	Partial discharge – per module	IEC1287. V 1 = 3500V, V 2 = 2600V, 50Hz RMS, TC= 25 °C	10	pC

Electrical Characristics

(Symbol)		(Parameter)	(Test Conditions)	(Min)	(Typ)	(Max)	(Unit)
I CES		Collector cut-off current	VGE = 0V,VCE = VCES			1	mA
			VGE = 0V, VCE = VCES , TC= 125 ° C			60	mA
			VGE = 0V, VCE = VCES , TC= 150 ° C			100	mA
I GES		Gate leakage current	VGE = ±20V, VCE = 0V			1	μA
VGE (TH)		Gate threshold voltage	I C= 80mA, VGE= VCE	5.50	6.10	7.00	V
VCE	(*1) (sat)	Collector-emitter saturation voltage	VGE= 15V, I C= 1000A		2.40	2.90	V
			VGE= 15V, I C= 1000A,Tvj = 125 ° C		2.95	3.40	V
			VGE= 15V, I C= 1000A,Tvj = 150 ° C		3.10	3.60	V
I F		Diode forward current	DC		1000		A
I FRM		Diode maximum forward current	t P = 1ms		2000		A
VF(*1)		Diode forward voltage	I F= 1000A		2.10	2.60	V
			I F= 1000A, Tvj= 125 ° C		2.25	2.70	V
			I F= 1000A, Tvj= 150 ° C		2.25	2.70	V
C ies		Input capacitance	VCE= 25V, VGE= 0V, f = 1MHz		170		nF
Q g		Gate charge	±15V		17		μC
C res		Reverse transfer capacitance	VCE= 25V, VGE= 0V, f = 1MHz		4		nF
L M		Module inductance			15		nH
R INT		Internal transistor resistance			165		μΩ
I SC		Short circuit current, ISC	Tvj = 150° C, VCC = 2500V, VGE≤15V, tp≤10μs, VCE(max) = VCES – L (*2)×di/dt, IEC 6074-9		3900		A

td(off)	Turn-off delay time	I C =1000A VCE =1800V C GE = 220nF L ~ 150nH VGE = ±15V RG(ON) = 1.5Ω RG(OFF)= 2.2Ω	1800	ns
t f	Fall time		530	ns
E OFF	Turn-off energy loss		1600	mJ
td(on)	Turn-on delay time		680	ns
t r	Rise time		320	ns
EON	Turn-on energy loss		1240	mJ
Q rr	Diode reverse recovery charge	I F =1000A VCE =1800V diF/dt =3300A/us	780	μC
I rr	Diode reverse recovery current		810	A
E rec	Diode reverse recovery energy		980	mJ
td(off)	Turn-off delay time	I C =1000A VCE =1800V C GE = 220nF L ~ 150nH VGE = ±15V RG(ON) = 1.5Ω RG(OFF)= 2.2Ω	1940	ns
t f	Fall time		580	ns
E OFF	Turn-off energy loss		1950	mJ
td(on)	Turn-on delay time		660	ns
t r	Rise time		340	ns
EON	Turn-on energy loss		1600	mJ
Q rr	Diode reverse recovery charge	I F =1000A VCE =1800V diF/dt =3300A/us	1200	μC
I rr	Diode reverse recovery current	I F =1000A VCE =1800V diF/dt =3300A/us	930	A