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IGBT Module 1200V

IGBT Module 1200V

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GD400SGY120C2S,IGBT Module,STARPOWER

IGBT Module,1200V 450A

Brand:
STARPOWER
Spu:
GD400SGY120C2S
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 400A.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC= 100oC

630

400

A

ICM

Pulsed Collector Current tp=1ms

800

A

PD

Maximum Power Dissipation @ Tj=175oC

2083

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current tp=1ms

800

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=400A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=400A,VGE=15V, Tj=125oC

1.95

IC=400A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC= 10.0mA,VCE=VGE, Tj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V,

Tj=25oC

400

nA

RGint

Internal Gate Resistance

1.9

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

41.4

nF

Cres

Reverse Transfer

Capacitance

1.16

nF

QG

Gate Charge

VGE=- 15V…+15V

3.11

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj=25oC

257

ns

tr

Rise Time

96

ns

td(off)

Turn-Off Delay Time

628

ns

tf

Fall Time

103

ns

Eon

Turn-On Switching

Loss

23.5

mJ

Eoff

Turn-Off Switching

Loss

34.0

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj= 125oC

268

ns

tr

Rise Time

107

ns

td(off)

Turn-Off Delay Time

659

ns

tf

Fall Time

144

ns

Eon

Turn-On Switching

Loss

35.3

mJ

Eoff

Turn-Off Switching

Loss

51.5

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj= 150oC

278

ns

tr

Rise Time

118

ns

td(off)

Turn-Off Delay Time

680

ns

tf

Fall Time

155

ns

Eon

Turn-On Switching

Loss

38.5

mJ

Eoff

Turn-Off Switching

Loss

56.7

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

1600

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25oC

1.80

2.25

V

IF=400A,VGE=0V,Tj= 125oC

1.85

IF=400A,VGE=0V,Tj= 150oC

1.85

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=5000A/μs,VGE=- 15V Tj=25oC

38.0

μC

IRM

Peak Reverse

Recovery Current

285

A

Erec

Reverse Recovery Energy

19

mJ

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=5000A/μs,VGE=- 15V Tj= 125oC

66.5

μC

IRM

Peak Reverse

Recovery Current

380

A

Erec

Reverse Recovery Energy

36.6

mJ

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=5000A/μs,VGE=- 15V Tj= 150oC

76.0

μC

IRM

Peak Reverse

Recovery Current

399

A

Erec

Reverse Recovery Energy

41.8

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE

Module Lead Resistance, Terminal to Chip

0.18

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.072

0.095

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.018

0.023

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g

Outline

image(6b521639e0).png

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