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IGBT Module 1200V

IGBT Module 1200V

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GD400HFX120C2S,IGBT Module,STARPOWER

1200V 400A

Brand:
STARPOWER
Spu:
GD400HFX120C2S
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 400A.

Features

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC=90oC

595

400

A

ICM

Pulsed Collector Current tp= 1ms

800

A

PD

Maximum Power Dissipation @ Tj=175oC

1875

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

400

A

IFM

Diode Maximum Forward Current tp=1ms

800

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=400A,VGE= 15V, Tj=25oC

1.75

2.20

V

IC=400A,VGE= 15V, Tj=125oC

2.00

IC=400A,VGE= 15V, Tj=150oC

2.05

VGE(th)

Gate-Emitter Threshold Voltage

IC= 10.0mA,VCE=VGE, Tj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

5.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

0.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

37.3

nF

Cres

Reverse Transfer

Capacitance

1.04

nF

QG

Gate Charge

VGE=- 15…+15V

2.80

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj=25oC

205

ns

tr

Rise Time

77

ns

td(off)

Turn-Off Delay Time

597

ns

tf

Fall Time

98

ns

Eon

Turn-On Switching

Loss

18.8

mJ

Eoff

Turn-Off Switching

Loss

32.3

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj= 125oC

214

ns

tr

Rise Time

86

ns

td(off)

Turn-Off Delay Time

626

ns

tf

Fall Time

137

ns

Eon

Turn-On Switching

Loss

28.4

mJ

Eoff

Turn-Off Switching

Loss

48.9

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=400A, RG=2.0Ω,

VGE=±15V, Tj= 150oC

198

ns

tr

Rise Time

94

ns

td(off)

Turn-Off Delay Time

646

ns

tf

Fall Time

147

ns

Eon

Turn-On Switching

Loss

30.8

mJ

Eoff

Turn-Off Switching

Loss

53.8

mJ

ISC

SC Data

tP≤10μs,VGE= 15V,

Tj=150oC,VCC=900V, VCEM≤1200V

1440

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=400A,VGE=0V,Tj=25oC

1.75

2.15

V

IF=400A,VGE=0V,Tj= 125oC

1.65

IF=400A,VGE=0V,Tj= 150oC

1.65

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=5000A/μs,VGE=- 15V Tj=25oC

40

μC

IRM

Peak Reverse

Recovery Current

299

A

Erec

Reverse Recovery Energy

20.0

mJ

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=5000A/μs,VGE=- 15V Tj= 125oC

70

μC

IRM

Peak Reverse

Recovery Current

399

A

Erec

Reverse Recovery Energy

38.4

mJ

Qr

Recovered Charge

VR=600V,IF=400A,

-di/dt=5000A/μs,VGE=- 15V Tj= 150oC

80

μC

IRM

Peak Reverse

Recovery Current

419

A

Erec

Reverse Recovery Energy

43.9

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

15

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.25

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.080

0.095

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.037

0.044

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g

Outline

image(c3756b8d25).png

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