All Categories

IGBT Module 1200V

IGBT Module 1200V

Home /  Products /  IGBT module /  IGBT Module 1200V

GD300SGY120C2S,IGBT Module,STARPOWER

1200V 300A

Brand:
STARPOWER
Spu:
GD300SGY120C2S
  • Introduction
  • Outline
Introduction

Brief introduction

IGBT module, produced by STARPOWER. 1200V 600A.

Feature

  • Low VCE(sat) Trench IGBT technology
  • 10μs short circuit capability
  • VCE(sat) with positive temperature coefficient
  • Maximum junction temperature 175oC
  • Low inductance case
  • Fast & soft reverse recovery anti-parallel FWD
  • Isolated copper baseplate using DBC technology

Typical Applications

  • Inverter for motor drive
  • AC and DC servo drive amplifier
  • Uninterruptible power supply

Absolute Maximum Ratings TC=25oC unless otherwise noted

IGBT

Symbol

Description

Value

Unit

VCES

Collector-Emitter Voltage

1200

V

VGES

Gate-Emitter Voltage

±20

V

IC

Collector Current @ TC=25oC

@ TC=100oC

480

300

A

ICM

Pulsed Collector Current tp=1ms

600

A

PD

Maximum Power Dissipation @ Tj=175oC

1613

W

Diode

Symbol

Description

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

1200

V

IF

Diode Continuous Forward Current

300

A

IFM

Diode Maximum Forward Current tp=1ms

600

A

Module

Symbol

Description

Value

Unit

Tjmax

Maximum Junction Temperature

175

oC

Tjop

Operating Junction Temperature

-40 to +150

oC

TSTG

Storage Temperature Range

-40 to +125

oC

VISO

Isolation Voltage RMS,f=50Hz,t=1min

4000

V

IGBT Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCE(sat)

Collector to Emitter

Saturation Voltage

IC=300A,VGE=15V, Tj=25oC

1.70

2.15

V

IC=300A,VGE=15V, Tj=125oC

1.95

IC=300A,VGE=15V, Tj=150oC

2.00

VGE(th)

Gate-Emitter Threshold Voltage

IC=7.50mA,VCE=VGE, Tj=25oC

5.2

6.0

6.8

V

ICES

Collector Cut-Off

Current

VCE=VCES,VGE=0V,

Tj=25oC

1.0

mA

IGES

Gate-Emitter Leakage Current

VGE=VGES,VCE=0V, Tj=25oC

400

nA

RGint

Internal Gate Resistance

2.5

Ω

Cies

Input Capacitance

VCE=25V,f=1MHz,

VGE=0V

31.1

nF

Cres

Reverse Transfer

Capacitance

0.87

nF

QG

Gate Charge

VGE=- 15…+15V

2.33

μC

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG= 1.3Ω,VGE=±15V, Tj=25oC

182

ns

tr

Rise Time

54

ns

td(off)

Turn-Off Delay Time

464

ns

tf

Fall Time

72

ns

Eon

Turn-On Switching

Loss

10.6

mJ

Eoff

Turn-Off Switching

Loss

25.8

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG= 1.3Ω,VGE=±15V, Tj= 125oC

193

ns

tr

Rise Time

54

ns

td(off)

Turn-Off Delay Time

577

ns

tf

Fall Time

113

ns

Eon

Turn-On Switching

Loss

16.8

mJ

Eoff

Turn-Off Switching

Loss

38.6

mJ

td(on)

Turn-On Delay Time

VCC=600V,IC=300A, RG= 1.3Ω,VGE=±15V, Tj= 150oC

203

ns

tr

Rise Time

54

ns

td(off)

Turn-Off Delay Time

618

ns

tf

Fall Time

124

ns

Eon

Turn-On Switching

Loss

18.5

mJ

Eoff

Turn-Off Switching

Loss

43.3

mJ

ISC

SC Data

tP≤10μs,VGE=15V,

Tj=150oC,VCC=900V, VCEM≤1200V

1200

A

Diode Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VF

Diode Forward

Voltage

IF=300A,VGE=0V,Tj=25oC

1.65

2.10

V

IF=300A,VGE=0V,Tj= 125oC

1.65

IF=300A,VGE=0V,Tj= 150oC

1.65

Qr

Recovered Charge

VCC=600V,IF=300A,

-di/dt=6050A/μs,VGE=- 15V, Tj=25oC

29

μC

IRM

Peak Reverse

Recovery Current

318

A

Erec

Reverse Recovery Energy

18.1

mJ

Qr

Recovered Charge

VCC=600V,IF=300A,

-di/dt=6050A/μs,VGE=- 15V, Tj= 125oC

55

μC

IRM

Peak Reverse

Recovery Current

371

A

Erec

Reverse Recovery Energy

28.0

mJ

Qr

Recovered Charge

VCC=600V,IF=300A,

-di/dt=6050A/μs,VGE=- 15V, Tj= 150oC

64

μC

IRM

Peak Reverse

Recovery Current

390

A

Erec

Reverse Recovery Energy

32.8

mJ

Module Characteristics TC=25oC unless otherwise noted

Symbol

Parameter

Min.

Typ.

Max.

Unit

LCE

Stray Inductance

20

nH

RCC’+EE’

Module Lead Resistance, Terminal to Chip

0.35

RthJC

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

0.093

0.155

K/W

RthCH

Case-to-Heatsink (per IGBT)

Case-to-Heatsink (per Diode)

Case-to-Heatsink (per Module)

0.016

0.027

0.010

K/W

M

Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6

2.5

3.0

5.0

5.0

N.m

G

Weight of Module

300

g

Outline

image(6b521639e0).png

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000

RELATED PRODUCT

Have questions about any products?

Our professional sales team are waiting for your consultation.
You can follow their product list and ask any questions you care about.

Get a Quote

Get a Free Quote

Our representative will contact you soon.
Email
Name
Company Name
Message
0/1000