YT3000SW45,IGBT Module ,with FWD, StakPak Package ,YT

Parameter

Symbol

Conditions

Value

Unit

Collector-Emitter Voltage

VCES

VGE=0V,Tvj=25°C

4500

V

DC Collector Current

IC

TC=100°C,Tvj=125°C

2000

A

Peak Collector Current

ICM

tp=1ms

4000

A

Gate-Emitter Voltage

VGES

±20

V

Total Power Dissipation

Ptot

TC=25°C,Tvj=125°C

20800

W

DC Forward Current

IF

2000

A

Peak Forward Current

IFRM

tp=1ms

4000

A

Surge Current

IFSM

VR=0V,Tvj=125°C,

tp=10ms,half-sinewave

14000

A

IGBT Short Circuit SOA

tpsc

VCC=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125°C

10

μs

Maximum Junction Temperature

Tvj(max)

125

℃

Junction Operating Temperature

Tvj(op)

-40~125

℃

Case temperature

TC

-40~125

℃

Storage Temperature

Tstg

-40~70

℃

Mounting force

FM

60~75

kN

Parameter

Symbol

Conditions

Value

Unit

Min.

Typ.

Max.

Collector-Emitter Breakdown Voltage

V(BR)CES

VGE=0V, IC=10mA, Tvj=25℃

4500

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=2000A, VGE=15V

Tvj=25℃

2.70

3.05

V

Tvj=125℃

3.35

3.85

V

Collector-Emitter Cut-off Current

ICES

VCE=4500V, VGE=0V

Tvj=25℃

1

mA

Tvj=125℃

15

100

mA

Gate-Emitter Leakage Current

IGES

VCE=0V, VGE=±20V, Tvj=125℃

-500

500

nA

Gate-Emitter Threshold Voltage

VGE(th)

IC=320mA, VCE=VGE, Tvj=25℃

6.7

7.7

V

Gate Charge

QG

IC=2000A, VCE=2800V, VGE=-15V~+15V

10

μC

Input Capacitance

Cies

VCE=25V, VGE=0V, f=500kHz, Tvj=25℃

213

nF

Output Capacitance

Coes

15.3

nF

Reverse Transfer Capacitance

Cres

4.7

nF

Internal Gate Resistance

RGint

0

Ω

Turn-on Delay Time

td(on)

IC=2000A,

VCE=2800V,

VGE=±15V,

RGon=1.8Ω,

RGoff=8.2Ω,

Cge=330nF,

LS=140nH,

Inductive Load

Tvj=25℃

1100

ns

Tvj=125℃

900

ns

Rise Time

tr

Tvj=25℃

400

ns

Tvj=125℃

450

ns

Turn-off Delay Time

td(off)

Tvj=25℃

3800

ns

Tvj=125℃

4100

ns

Fall Time

tf

Tvj=25℃

1200

ns

Tvj=125℃

1400

ns

Turn-on Switching Energy

Eon

Tvj=25℃

14240

mJ

Tvj=125℃

15730

mJ

Turn-off Switching Energy

Eoff

Tvj=25℃

6960

mJ

Tvj=125℃

8180

mJ

Short Circuit Current

ISC

VGE≤15V, tpsc≤10µs, VCC=3400V, Tvj=125℃

VCEM CHIP≤4500V

8400

A

Parameter

Symbol

Conditions

Value

Unit

Min.

Typ.

Max.

Forward Voltage

VF

IF=2000A

Tvj=25℃

2.60

V

Tvj=125℃

2.85

V

Reverse Recovery Current

Irr

IF=2000A, VR=2800V, VGE=15V, RGon=1.8Ω, LS=140nH,

Inductive load

Tvj=25℃

1620

A

Tvj=125℃

1970

A

Reverse Recovery Charge

Qrr

Tvj=25℃

1750

uC

Tvj=125℃

2700

uC

Reverse Recovery Time

trr

Tvj=25℃

4.0

us

Tvj=125℃

5.1

us

Reverse Recovery Energy Loss

Erec

Tvj=25℃

2350

mJ

Tvj=125℃

3860

mJ