YT3000SW45,IGBT Module,with FWD, StakPak Package,YT

Parameter

Symbol

Conditions

Value

Unit

Collector‐Emitter Voltage

VCES

VGE=0V,Tvj=25°C

4500

V

DC Collector Current

IC

TC=100°C,Tvj=125°C

3000

A

Peak Collector Current

ICM

tp=1ms

6000

A

Gate‐Emitter Voltage

VGES

±20

V

Total Power Dissipation

Ptot

TC=25°C,Tvj=125°C

31200

W

DC Forward Current

IF

3000

A

Peak Forward Current

IFRM

tp=1ms

6000

A

Surge Current

IFSM

VR=0V,Tvj=125°C,

tp=10ms,half‐sinewave

21000

A

IGBT Short Circuit SOA

tpsc

VCC=3400V,VCEM CHIP≤4500V VGE≤15V,Tvj≤125°C

10

μs

Maximum Junction Temperature

Tvj(max)

125

℃

Junction Operating Temperature

Tvj(op)

‐40~125

℃

Case temperature

TC

‐40~125

℃

Storage Temperature

Tstg

‐40~70

℃

Mounting force

FM

90~130

kN

Parameter

Symbol

Conditions

Value

Unit

Min.

Typ.

Max.

Forward Voltage

VF

IF=3000A

Tvj=25℃

2.60

V

Tvj=125℃

2.85

V

Reverse Recovery Current

Irr

IF=3000A, VR=2800V,

diF/dt=‐2500A/μs, VGE=15V,

RGon=1.5Ω,

LS=140nH,

Inductive load

Tvj=25℃

1690

A

Tvj=125℃

2750

A

Reverse Recovery Charge

Qrr

Tvj=25℃

3000

uC

Tvj=125℃

3950

uC

Reverse Recovery Time

trr

Tvj=25℃

1.80

us

Tvj=125℃

2.20

us

Reverse Recovery Energy Loss

Erec

Tvj=25℃

4000

mJ

Tvj=125℃

6300

mJ